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IXFR12N100F Технические параметры
IXYS Integrated Circuits Division / Littelfuse IXFR12N100F technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Arrays | |
| Марка | ||
| Surface Mount | NO | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| EU RoHS | Compliant | |
| ECCN (US) | EAR99 | |
| HTS | 8541.29.00.95 | |
| Automotive | No | |
| PPAP | No | |
| Category | Power MOSFET | |
| Process Technology | HiperFET | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Maximum Drain Source Voltage (V) | 1000 | |
| Maximum Gate Source Voltage (V) | ±20 | |
| Maximum Continuous Drain Current (A) | 10 | |
| Typical Gate Charge @ Vgs (nC) | 77@10V | |
| Typical Gate Charge @ 10V (nC) | 77 | |
| Typical Input Capacitance @ Vds (pF) | 2700@25V | |
| Maximum Power Dissipation (mW) | 250000 | |
| Typical Fall Time (ns) | 12 | |
| Typical Rise Time (ns) | 9.8 | |
| Typical Turn-Off Delay Time (ns) | 31 | |
| Typical Turn-On Delay Time (ns) | 12 | |
| Minimum Operating Temperature (°C) | -40 | |
| Maximum Operating Temperature (°C) | 150 | |
| Mounting | Through Hole | |
| Package Height | 21.34(Max) | |
| Package Width | 5.21(Max) | |
| Package Length | 16.13(Max) | |
| PCB changed | 3 | |
| Tab | Tab | |
| Standard Package Name | SOP | |
| Supplier Package | ISOPLUS 247 | |
| Package Description | ISOPLUS247, 3 PIN |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Package Style | IN-LINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | IXFR12N100F | |
| Package Shape | RECTANGULAR | |
| Manufacturer | IXYS Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Risk Rank | 5.71 | |
| Drain Current-Max (ID) | 10 A | |
| JESD-609 Code | e1 | |
| Pbfree Code | Yes | |
| Part Status | Unconfirmed | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| Additional Feature | AVALANCHE RATED | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | Single | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | ISOLATED | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 1.05 Ω | |
| Pulsed Drain Current-Max (IDM) | 48 A | |
| DS Breakdown Voltage-Min | 1000 V | |
| Channel Type | N | |
| Avalanche Energy Rating (Eas) | 1000 mJ | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
Индекс :
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