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IXZ318N50 Технические параметры
IXYS-RF IXZ318N50 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Factory Lead Time | 10 Weeks | |
| Package / Case | 6-SMD, Flat Lead Exposed Pad | |
| Surface Mount | YES | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 175°C | |
| Voltage Rated | 500V | |
| Packaging | Tube | |
| Series | Z-MOS™ | |
| Published | 2009 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 6Terminations | |
| Current Rating (Amps) | 19A | |
| Terminal Position | DUAL | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Reach Compliance Code | compliant | |
| Frequency | 65MHz | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| JESD-30 Code | R-PDSO-F6 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | ISOLATED | |
| Transistor Application | SWITCHING | |
| Transistor Type | N-Channel | |
| Gain | 23dB | |
| Drain Current-Max (Abs) (ID) | 19A | |
| DS Breakdown Voltage-Min | 500V | |
| Power - Output | 880W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 880W | |
| Voltage - Test | 100V | |
| RoHS Status | RoHS Compliant |
IXZ318N50 Документы
- DatasheetsIXZ318N50
- PCN Obsolescence/ EOLMult Dev EOL 18/Jan/2019
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