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IXYS-RF IXZR08N120 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
Свойство продукта | Значение свойства | |
---|---|---|
Классификация | Transistors - FETs, MOSFETs - RF | |
Марка | ||
Factory Lead Time | 10 Weeks | |
Package / Case | TO-247-3 | |
Surface Mount | NO | |
Transistor Element Material | SILICON | |
Number of Elements | 1 Element | |
Operating Temperature (Max.) | 175°C | |
Voltage Rated | 1200V | |
Packaging | Tube | |
Series | Z-MOS™ | |
JESD-609 Code | e1 | |
Pbfree Code | yes | |
Part Status | Obsolete | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Number of Terminations | 3Terminations | |
Terminal Finish | TIN SILVER COPPER | |
Current Rating (Amps) | 8A | |
Terminal Position | SINGLE | |
Terminal Form | THROUGH-HOLE |
Свойство продукта | Значение свойства | |
---|---|---|
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Reach Compliance Code | compliant | |
Frequency | 65MHz | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Pin Count | 3 | |
JESD-30 Code | R-PSIP-T3 | |
Qualification Status | Not Qualified | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
Operating Mode | ENHANCEMENT MODE | |
Case Connection | ISOLATED | |
Transistor Application | SWITCHING | |
Transistor Type | N-Channel | |
Gain | 23dB | |
Drain Current-Max (Abs) (ID) | 8A | |
DS Breakdown Voltage-Min | 1200V | |
Power - Output | 250W | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Power Dissipation-Max (Abs) | 250W | |
Voltage - Test | 100V | |
RoHS Status | RoHS Compliant |