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IXYS-RF IXZR08N120 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - RF | |
| Марка | ||
| Factory Lead Time | 10 Weeks | |
| Package / Case | TO-247-3 | |
| Surface Mount | NO | |
| Transistor Element Material | SILICON | |
| Number of Elements | 1 Element | |
| Operating Temperature (Max.) | 175°C | |
| Voltage Rated | 1200V | |
| Packaging | Tube | |
| Series | Z-MOS™ | |
| JESD-609 Code | e1 | |
| Pbfree Code | yes | |
| Part Status | Obsolete | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 3Terminations | |
| Terminal Finish | TIN SILVER COPPER | |
| Current Rating (Amps) | 8A | |
| Terminal Position | SINGLE | |
| Terminal Form | THROUGH-HOLE |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Frequency | 65MHz | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Pin Count | 3 | |
| JESD-30 Code | R-PSIP-T3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | ISOLATED | |
| Transistor Application | SWITCHING | |
| Transistor Type | N-Channel | |
| Gain | 23dB | |
| Drain Current-Max (Abs) (ID) | 8A | |
| DS Breakdown Voltage-Min | 1200V | |
| Power - Output | 250W | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 250W | |
| Voltage - Test | 100V | |
| RoHS Status | RoHS Compliant |