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KRC855E Технические параметры

KEC  KRC855E technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка KEC
Surface Mount YES
Number of Terminals 6Terminals
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 200 MHz
Package Style SMALL OUTLINE
Package Shape RECTANGULAR
Package Body Material PLASTIC/EPOXY
Number of Elements 2 Elements
Package Description SMALL OUTLINE, R-PDSO-F6
Ihs Manufacturer KEC CORP
Part Life Cycle Code Active
ECCN Code EAR99
Свойство продукта Значение свойства
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 21.36
Terminal Position DUAL
Terminal Form FLAT
Reach Compliance Code unknown
Pin Count 6
JESD-30 Code R-PDSO-F6
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Collector Current-Max (IC) 0.1 A
DC Current Gain-Min (hFE) 80
Collector-Emitter Voltage-Max 50 V

KRC855E Документы

  • Datasheets
KRC855E brand manufacturers: KEC, Anli stock, KRC855E reference price.KEC. KRC855E parameters, KRC855E Datasheet PDF and pin diagram description download.You can use the KRC855E Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find KRC855E pin diagram and circuit diagram and usage method of function,KRC855E electronics tutorials.You can download from the Anli.