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P2HM1102H Технические параметры
KYOCERA Corporation P2HM1102H technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Special Purpose | |
| Марка | ||
| Surface Mount | NO | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | KYOCERA CORP | |
| Package Description | FLANGE MOUNT, R-XUFM-X8 | |
| Drain Current-Max (ID) | 80 A | |
| Number of Elements | 2 Elements | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | UPPER | |
| Terminal Form | UNSPECIFIED | |
| Reach Compliance Code | unknown | |
| JESD-30 Code | R-XUFM-X8 | |
| Qualification Status | Not Qualified | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | ISOLATED | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | N-CHANNEL | |
| Drain-source On Resistance-Max | 0.033 Ω | |
| Pulsed Drain Current-Max (IDM) | 220 A | |
| DS Breakdown Voltage-Min | 250 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
P2HM1102H Документы
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