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2SB1386T100R Технические параметры

LAPIS  2SB1386T100R technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package MPT3
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current-Collector (Ic) (Max) 5A
Other Names 2SB1386T100R-ND 2SB1386T100RTR
Operating Temperature 150°C (TJ)
Series -
Свойство продукта Значение свойства
Packaging Tape & Reel (TR)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 2SB1386
Power - Max 2W
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 500mA, 2V
Current - Collector Cutoff (Max) 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 4A
Voltage - Collector Emitter Breakdown (Max) 20V
Frequency - Transition 120MHz
Просмотр сходства
2SB1386T100R brand manufacturers: LAPIS, Anli stock, 2SB1386T100R reference price.LAPIS. 2SB1386T100R parameters, 2SB1386T100R Datasheet PDF and pin diagram description download.You can use the 2SB1386T100R Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find 2SB1386T100R pin diagram and circuit diagram and usage method of function,2SB1386T100R electronics tutorials.You can download from the Anli.