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BR25L010F-WE2 Технические параметры

LAPIS  BR25L010F-WE2 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Memory
Марка
Mounting Type Through Hole
Package / Case Radial, Vertical Cylinder
Supplier Device Package Radial
Frequency-Self-Resonant -
Package Bulk
Inductance Frequency-Test 2.52 MHz
Mfr Central Technologies
Product Status Active
Material-Core -
Current - Saturation (Isat) 2.4A
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Other Names BR25L010F-WE2DKR
Memory Types Non-Volatile
Operating Temperature -
Series CTSCH875DF
Packaging Original-Reel®
Size / Dimension 0.307 Dia (7.80mm)
Свойство продукта Значение свойства
Tolerance ±15%
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Type -
Technology EEPROM
Voltage - Supply 1.8 V ~ 5.5 V
Shielding Shielded
Base Part Number BR25L010
Inductance 10 µH
Memory Size 1Kb (128 x 8)
DC Resistance (DCR) 50mOhm Max
Clock Frequency 5MHz
Q @ Freq -
Memory Format EEPROM
Memory Interface SPI
Write Cycle Time - Word, Page 5ms
Features -
Height Seated (Max) 0.307 (7.80mm)
Ratings -
Просмотр сходства
BR25L010F-WE2 brand manufacturers: LAPIS, Anli stock, BR25L010F-WE2 reference price.LAPIS. BR25L010F-WE2 parameters, BR25L010F-WE2 Datasheet PDF and pin diagram description download.You can use the BR25L010F-WE2 Memory, DSP Datesheet PDF, find BR25L010F-WE2 pin diagram and circuit diagram and usage method of function,BR25L010F-WE2 electronics tutorials.You can download from the Anli.