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DTB113ESTP Технические параметры

LAPIS  DTB113ESTP technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single, Pre-Biased
Марка
Mounting Type Through Hole
Package / Case SC-72 Formed Leads
Supplier Device Package SPT
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current-Collector (Ic) (Max) 500mA
Other Names DTB113ESTP-ND DTB113ESTPTB
Series -
Packaging Tape & Box (TB)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Свойство продукта Значение свойства
Base Part Number DTB113
Power - Max 300mW
Transistor Type PNP - Pre-Biased
DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 50mA, 5V
Current - Collector Cutoff (Max) 500nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 50V
Frequency - Transition 200MHz
Resistor - Base (R1) 1 kOhms
Resistor - Emitter Base (R2) 1 kOhms
Просмотр сходства
DTB113ESTP brand manufacturers: LAPIS, Anli stock, DTB113ESTP reference price.LAPIS. DTB113ESTP parameters, DTB113ESTP Datasheet PDF and pin diagram description download.You can use the DTB113ESTP Transistors - Bipolar (BJT) - Single, Pre-Biased, DSP Datesheet PDF, find DTB113ESTP pin diagram and circuit diagram and usage method of function,DTB113ESTP electronics tutorials.You can download from the Anli.