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RQ3G150GNTB Технические параметры

LAPIS  RQ3G150GNTB technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package 8-HSMT (3.2x3)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Current - Continuous Drain (Id) @ 25℃ 39A (Tc)
Other Names RQ3G150GNTBDKR
Drive Voltage (Max Rds On, Min Rds On) 10V
Power Dissipation (Max) 20W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Series -
Свойство продукта Значение свойства
Packaging Original-Reel®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.2 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1450pF @ 20V
Gate Charge (Qg) (Max) @ Vgs 11.6nC @ 4.5V
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
FET Feature -
Просмотр сходства
RQ3G150GNTB brand manufacturers: LAPIS, Anli stock, RQ3G150GNTB reference price.LAPIS. RQ3G150GNTB parameters, RQ3G150GNTB Datasheet PDF and pin diagram description download.You can use the RQ3G150GNTB Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find RQ3G150GNTB pin diagram and circuit diagram and usage method of function,RQ3G150GNTB electronics tutorials.You can download from the Anli.