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BC856B Технические параметры

LGE  BC856B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка LGE
RoHS true
Collector Cut-Off Current (Icbo) 1nA
Collector-Emitter Breakdown Voltage (Vceo) 65V
Power Dissipation (Pd) 250mW
DC Current Gain (hFE@Ic,Vce) 220@2mA,5V
BC856B brand manufacturers: LGE, Anli stock, BC856B reference price.LGE. BC856B parameters, BC856B Datasheet PDF and pin diagram description download.You can use the BC856B Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find BC856B pin diagram and circuit diagram and usage method of function,BC856B electronics tutorials.You can download from the Anli.