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BC857B Технические параметры

LGE  BC857B technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка LGE
RoHS true
Collector Cut-Off Current (Icbo) 15nA
Collector-Emitter Breakdown Voltage (Vceo) 45V
Power Dissipation (Pd) 225mW

BC857B Документы

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