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MMBT3906 Технические параметры

LGE  MMBT3906 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка LGE
RoHS true
Collector Cut-Off Current (Icbo) 50nA
Collector-Emitter Breakdown Voltage (Vceo) 40V
Power Dissipation (Pd) 250mW
MMBT3906 brand manufacturers: LGE, Anli stock, MMBT3906 reference price.LGE. MMBT3906 parameters, MMBT3906 Datasheet PDF and pin diagram description download.You can use the MMBT3906 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find MMBT3906 pin diagram and circuit diagram and usage method of function,MMBT3906 electronics tutorials.You can download from the Anli.