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S9012 Технические параметры

LGE  S9012 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Single
Марка LGE
RoHS true
Collector Cut-Off Current (Icbo) 100nA
Collector-Emitter Breakdown Voltage (Vceo) 25V
Power Dissipation (Pd) 300mW
S9012 brand manufacturers: LGE, Anli stock, S9012 reference price.LGE. S9012 parameters, S9012 Datasheet PDF and pin diagram description download.You can use the S9012 Transistors - Bipolar (BJT) - Single, DSP Datesheet PDF, find S9012 pin diagram and circuit diagram and usage method of function,S9012 electronics tutorials.You can download from the Anli.