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IXFA26N50P3 Технические параметры

Littelfuse  IXFA26N50P3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка Littelfuse
Package / Case TO-263-3
EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.21.00.95
Automotive No
PPAP No
Category Power MOSFET
Process Technology HiperFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 500
Maximum Gate Source Voltage (V) ±30
Maximum Gate Threshold Voltage (V) 5
Maximum Continuous Drain Current (A) 26
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 25
Maximum Drain Source Resistance (MOhm) 250@10V
Typical Gate Charge @ Vgs (nC) 42@10V
Typical Gate Charge @ 10V (nC) 42
Typical Input Capacitance @ Vds (pF) 2220@25V
Maximum Power Dissipation (mW) 500000
Typical Fall Time (ns) 5
Typical Rise Time (ns) 7
Свойство продукта Значение свойства
Typical Turn-Off Delay Time (ns) 38
Typical Turn-On Delay Time (ns) 21
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Package Height 4.83(Max)
Package Width 9.4(Max)
Package Length 10.41(Max)
PCB changed 2
Tab Tab
Standard Package Name TO-263
Supplier Package D2PAK
Lead Shape Gull-wing
Vds - Drain-Source Breakdown Voltage 500 V
Transistor Polarity N-Channel
Mounting Styles SMD/SMT
Rds On - Drain-Source Resistance 240 mOhms
Id - Continuous Drain Current 26 A
Part Status Active
Technology Si
Pin Count 3
Configuration Single
Number of Channels 1 ChannelChannel
Channel Type N
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