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IXFA72N20X3 Технические параметры

Littelfuse  IXFA72N20X3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка Littelfuse
Package / Case TO-263-3
EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.29.00.95
Automotive No
PPAP No
Category Power MOSFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 200
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 72
Maximum Drain Source Resistance (MOhm) 20@10V
Typical Gate Charge @ Vgs (nC) 55@10V
Typical Gate Charge @ 10V (nC) 55
Typical Input Capacitance @ Vds (pF) 3780@25V
Maximum Power Dissipation (mW) 320000
Typical Fall Time (ns) 11
Typical Rise Time (ns) 28
Typical Turn-Off Delay Time (ns) 78
Typical Turn-On Delay Time (ns) 23
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Surface Mount
Свойство продукта Значение свойства
Package Height 4.83(Max)
Package Width 9.4(Max)
Package Length 10.41(Max)
PCB changed 2
Tab Tab
Standard Package Name TO-263
Supplier Package D2PAK
Lead Shape Gull-wing
Vds - Drain-Source Breakdown Voltage 200 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Pd - Power Dissipation 320 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 150 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Mounting Styles SMD/SMT
Qg - Gate Charge 55 nC
Id - Continuous Drain Current 72 A
Rds On - Drain-Source Resistance 20 mOhms
Series HiPerFET
Part Status Active
Technology Si
Pin Count 3
Configuration Single
Number of Channels 1 ChannelChannel
Channel Type N
Просмотр сходства
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