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IXFB110N60P3 Технические параметры

Littelfuse  IXFB110N60P3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка Littelfuse
EU RoHS Compliant with Exemption
HTS 8541.29.00.95
Automotive No
PPAP No
Category Power MOSFET
Process Technology Polar3 HiperFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 600
Maximum Gate Source Voltage (V) ±30
Maximum Continuous Drain Current (A) 110
Maximum Drain Source Resistance (MOhm) 56@10V
Typical Gate Charge @ Vgs (nC) 254@10V
Typical Gate Charge @ 10V (nC) 254
Typical Input Capacitance @ Vds (pF) 18000@25V
Maximum Power Dissipation (mW) 1890000
Свойство продукта Значение свойства
Typical Fall Time (ns) 15
Typical Rise Time (ns) 30
Typical Turn-Off Delay Time (ns) 106
Typical Turn-On Delay Time (ns) 63
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Through Hole
Package Height 26.59(Max)
Package Width 5.31(Max)
Package Length 20.29(Max)
PCB changed 3
Tab Tab
Supplier Package PLUS 264
Part Status Active
Pin Count 3
Configuration Single
Channel Type N
Просмотр сходства
IXFB110N60P3 brand manufacturers: Littelfuse, Anli stock, IXFB110N60P3 reference price.Littelfuse. IXFB110N60P3 parameters, IXFB110N60P3 Datasheet PDF and pin diagram description download.You can use the IXFB110N60P3 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find IXFB110N60P3 pin diagram and circuit diagram and usage method of function,IXFB110N60P3 electronics tutorials.You can download from the Anli.