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IXFK200N10P Технические параметры

Littelfuse  IXFK200N10P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка Littelfuse
EU RoHS Compliant with Exemption
Automotive No
PPAP No
Category Power MOSFET
Process Technology HiperFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 100
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 200
Maximum Drain Source Resistance (MOhm) 7.5@10V
Typical Gate Charge @ Vgs (nC) 235@10V
Typical Gate Charge @ 10V (nC) 235
Typical Input Capacitance @ Vds (pF) 7600@25V
Maximum Power Dissipation (mW) 830000
Свойство продукта Значение свойства
Typical Fall Time (ns) 90
Typical Rise Time (ns) 35
Typical Turn-Off Delay Time (ns) 150
Typical Turn-On Delay Time (ns) 30
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 175
Mounting Through Hole
Package Height 26.16(Max)
Package Width 5.13(Max)
Package Length 19.96(Max)
PCB changed 3
Tab Tab
Supplier Package TO-264
Part Status Active
Pin Count 3
Configuration Single
Channel Type N
IXFK200N10P brand manufacturers: Littelfuse, Anli stock, IXFK200N10P reference price.Littelfuse. IXFK200N10P parameters, IXFK200N10P Datasheet PDF and pin diagram description download.You can use the IXFK200N10P Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find IXFK200N10P pin diagram and circuit diagram and usage method of function,IXFK200N10P electronics tutorials.You can download from the Anli.