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IXFP10N60P Технические параметры

Littelfuse  IXFP10N60P technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка Littelfuse
EU RoHS Compliant
ECCN (US) EAR99
Automotive No
PPAP No
Category Power MOSFET
Process Technology HiperFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 600
Maximum Gate Source Voltage (V) ±30
Maximum Continuous Drain Current (A) 10
Typical Gate Charge @ Vgs (nC) 32@10V
Typical Gate Charge @ 10V (nC) 32
Typical Input Capacitance @ Vds (pF) 1720@25V
Maximum Power Dissipation (mW) 200000
Свойство продукта Значение свойства
Typical Fall Time (ns) 21
Typical Rise Time (ns) 27
Typical Turn-Off Delay Time (ns) 65
Typical Turn-On Delay Time (ns) 23
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Through Hole
Package Height 9.15(Max)
Package Width 4.83(Max)
Package Length 10.66(Max)
PCB changed 3
Tab Tab
Supplier Package TO-220AB
Part Status Active
Pin Count 3
Configuration Single
Channel Type N
Просмотр сходства
IXFP10N60P brand manufacturers: Littelfuse, Anli stock, IXFP10N60P reference price.Littelfuse. IXFP10N60P parameters, IXFP10N60P Datasheet PDF and pin diagram description download.You can use the IXFP10N60P Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find IXFP10N60P pin diagram and circuit diagram and usage method of function,IXFP10N60P electronics tutorials.You can download from the Anli.