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IXFQ50N50P3 Технические параметры

Littelfuse  IXFQ50N50P3 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка Littelfuse
EU RoHS Compliant with Exemption
ECCN (US) EAR99
Automotive No
PPAP No
Category Power MOSFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 500
Maximum Gate Source Voltage (V) ±30
Maximum Continuous Drain Current (A) 50
Typical Gate Charge @ Vgs (nC) 85@10V
Typical Gate Charge @ 10V (nC) 85
Typical Input Capacitance @ Vds (pF) 4335@25V
Maximum Power Dissipation (mW) 960000
Свойство продукта Значение свойства
Typical Fall Time (ns) 10
Typical Rise Time (ns) 8
Typical Turn-Off Delay Time (ns) 53
Typical Turn-On Delay Time (ns) 25
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Through Hole
Package Width 4.9(Max)
Package Length 15.8(Max)
PCB changed 3
Tab Tab
Supplier Package TO-3P
Part Status Active
Pin Count 3
Configuration Single
Channel Type N
Просмотр сходства
IXFQ50N50P3 brand manufacturers: Littelfuse, Anli stock, IXFQ50N50P3 reference price.Littelfuse. IXFQ50N50P3 parameters, IXFQ50N50P3 Datasheet PDF and pin diagram description download.You can use the IXFQ50N50P3 Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find IXFQ50N50P3 pin diagram and circuit diagram and usage method of function,IXFQ50N50P3 electronics tutorials.You can download from the Anli.