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IXFT50N60P3-TRL Технические параметры

Littelfuse  IXFT50N60P3-TRL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка Littelfuse
Package / Case TO-268-3
EU RoHS Compliant with Exemption
ECCN (US) EAR99
Automotive No
PPAP No
Category Power MOSFET
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 600
Maximum Gate Source Voltage (V) ±30
Maximum Continuous Drain Current (A) 50
Typical Gate Charge @ Vgs (nC) 94@10V
Typical Gate Charge @ 10V (nC) 94
Typical Input Capacitance @ Vds (pF) 6300@25V
Maximum Power Dissipation (mW) 1040000
Typical Fall Time (ns) 17
Typical Rise Time (ns) 20
Typical Turn-Off Delay Time (ns) 62
Typical Turn-On Delay Time (ns) 31
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Свойство продукта Значение свойства
Mounting Surface Mount
Package Height 5.1(Max)
Package Width 14(Max)
Package Length 16.05(Max)
PCB changed 2
Tab Tab
Supplier Package TO-268
Vds - Drain-Source Breakdown Voltage 600 V
Vgs th - Gate-Source Threshold Voltage 3 V
Pd - Power Dissipation 1.04 mW
Vgs - Gate-Source Voltage - 30 V, + 30 V
Mounting Styles Through Hole
Qg - Gate Charge 94 nC
Rds On - Drain-Source Resistance 160 mOhms
Id - Continuous Drain Current 50 A
Packaging Tape and Reel
Part Status Active
Technology Si
Pin Count 3
Configuration Single
Number of Channels 1 ChannelChannel
Channel Type N
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