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IXTA220N04T2-TRL Технические параметры

Littelfuse  IXTA220N04T2-TRL technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка Littelfuse
Package / Case TO-263-7
EU RoHS Compliant
ECCN (US) EAR99
HTS 8541.29.00.95
Automotive Unknown
PPAP Unknown
Category Power MOSFET
Process Technology TrenchT2
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 40
Maximum Gate Source Voltage (V) ±20
Maximum Continuous Drain Current (A) 220
Maximum Drain Source Resistance (MOhm) 3.5@10V
Typical Gate Charge @ Vgs (nC) 112@10V
Typical Gate Charge @ 10V (nC) 112
Typical Input Capacitance @ Vds (pF) 6820@25V
Maximum Power Dissipation (mW) 360000
Typical Fall Time (ns) 21
Typical Rise Time (ns) 21
Typical Turn-Off Delay Time (ns) 31
Supplier Package D2PAK
Tab Tab
PCB changed 2
Свойство продукта Значение свойства
Package Length 10.41(Max)
Package Width 9.4(Max)
Package Height 4.7(Max)
Mounting Surface Mount
Maximum Operating Temperature (°C) 175
Minimum Operating Temperature (°C) -55
Typical Turn-On Delay Time (ns) 15
Vds - Drain-Source Breakdown Voltage 40 V
Vgs th - Gate-Source Threshold Voltage 2 V
Pd - Power Dissipation 360 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 20 V, + 20 V
Minimum Operating Temperature - 55 C
Mounting Styles SMD/SMT
Qg - Gate Charge 112 nC
Rds On - Drain-Source Resistance 3.5 mOhms
Id - Continuous Drain Current 220 A
Packaging Tape and Reel
Part Status Active
Technology Si
Pin Count 3
Configuration Single
Number of Channels 1 ChannelChannel
Channel Type N
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