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LSIC1MO120G0080 Технические параметры

Littelfuse  LSIC1MO120G0080 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Single
Марка Littelfuse
Mounting Type Through Hole
Package / Case TO-247-4
Supplier Device Package TO-247-4L
Package Tube
Current - Continuous Drain (Id) @ 25℃ 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Mfr Littelfuse Inc.
Power Dissipation (Max) 214W (Tc)
Product Status Active
Vds - Drain-Source Breakdown Voltage 1.2 kV
Vgs th - Gate-Source Threshold Voltage 4 V
Pd - Power Dissipation 214 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 175 C
Vgs - Gate-Source Voltage - 5 V, + 20 V
Minimum Operating Temperature - 55 C
Свойство продукта Значение свойства
Mounting Styles Through Hole
Channel Mode Enhancement
Qg - Gate Charge 92 nC
Rds On - Drain-Source Resistance 100 mOhms
Id - Continuous Drain Current 39 A
Operating Temperature -55°C ~ 175°C (TJ)
Series -
Technology SiCFET (Silicon Carbide)
Number of Channels 1 ChannelChannel
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100mOhm @ 20A, 20V
Vgs(th) (Max) @ Id 4V @ 10mA
Input Capacitance (Ciss) (Max) @ Vds 170 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs 92 nC @ 20 V
Drain to Source Voltage (Vdss) 1200 V
Vgs (Max) +22V, -6V
FET Feature -
Просмотр сходства
LSIC1MO120G0080 brand manufacturers: Littelfuse, Anli stock, LSIC1MO120G0080 reference price.Littelfuse. LSIC1MO120G0080 parameters, LSIC1MO120G0080 Datasheet PDF and pin diagram description download.You can use the LSIC1MO120G0080 Transistors - FETs, MOSFETs - Single, DSP Datesheet PDF, find LSIC1MO120G0080 pin diagram and circuit diagram and usage method of function,LSIC1MO120G0080 electronics tutorials.You can download from the Anli.