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S-LBAS16TW1T1G Технические параметры
LRC Leshan Radio Co Ltd S-LBAS16TW1T1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - Bridge Rectifiers | |
| Марка | ||
| Surface Mount | YES | |
| Diode Element Material | SILICON | |
| Number of Terminals | 6Terminals | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LESHAN RADIO CO LTD | |
| Package Description | R-PDSO-G6 | |
| Moisture Sensitivity Levels | 1 | |
| Number of Elements | 3 Elements | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Power Dissipation (Max) | 0.2 W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-609 Code | e3 | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN | |
| Applications | GENERAL PURPOSE | |
| HTS Code | 8541.10.00.70 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | unknown | |
| Reference Standard | AEC-Q101 | |
| JESD-30 Code | R-PDSO-G6 | |
| Configuration | SEPARATE, 3 ELEMENTS | |
| Diode Type | RECTIFIER DIODE | |
| Output Current-Max | 0.15 A | |
| Rep Pk Reverse Voltage-Max | 75 V | |
| Reverse Recovery Time-Max | 0.004 µs |
S-LBAS16TW1T1G Документы
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