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UF28100M Технические параметры
MA-COM UF28100M technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Mount | Screw | |
| Surface Mount | YES | |
| Number of Pins | 5Pins | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Drain Source Voltage (Max) | 65(V) | |
| Continuous Drain Current | 12(A) | |
| Power Gain (Typ)@Vds | 10(Min)(dB) | |
| Input Capacitance (Typ)@Vds | 135(MAX)@28V(pF) | |
| Operating Temp Range | -55C to 200C | |
| Power Dissipation (Max) | 250000(mW) | |
| Output Power (Max) | 100 | |
| Channel Mode | Enhancement | |
| Drain Efficiency (Typ) | 50(Min)(%) | |
| Number of Elements | 1 Element | |
| Frequency(Max) | 500(MHz) | |
| Rad Hardened | No | |
| Mounting | Screw | |
| Factory Pack QuantityFactory Pack Quantity | 10 | |
| Manufacturer | MACOM | |
| Brand | MACOM | |
| RoHS | Details | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 200 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | UF28100M | |
| Package Shape | RECTANGULAR | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | TE CONNECTIVITY LTD | |
| Risk Rank | 5.32 | |
| Drain Current-Max (ID) | 12 A |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Usage Level | Military grade | |
| ECCN Code | EAR99 | |
| Max Operating Temperature | 200 °C | |
| Min Operating Temperature | -55 °C | |
| HTS Code | 8541.29.00.75 | |
| Subcategory | MOSFETs | |
| Max Power Dissipation | 250 W | |
| Technology | Si | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Pin Count | 5 | |
| JESD-30 Code | R-CDFM-F4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SOURCE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Product Type | RF MOSFET Transistors | |
| Continuous Drain Current (ID) | 12 A | |
| Gate to Source Voltage (Vgs) | 20 V | |
| Max Frequency | 500 MHz | |
| Screening Level | Military | |
| DS Breakdown Voltage-Min | 65 V | |
| Channel Type | N | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 24 pF | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| Power Dissipation Ambient-Max | 250 W | |
| Frequency (Min) | 100(MHz) | |
| Power Gain-Min (Gp) | 10 dB | |
| Product Category | RF MOSFET Transistors | |
| Radiation Hardening | No |
Индекс :
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