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UF28100V Технические параметры
MA-COM UF28100V technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | ||
| Package / Case | 744A-01 | |
| Surface Mount | YES | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| Vds - Drain-Source Breakdown Voltage | 65 V | |
| Vgs th - Gate-Source Threshold Voltage | 6 V | |
| Pd - Power Dissipation | 250 W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | + 150 C | |
| Vgs - Gate-Source Voltage | 20 V | |
| Minimum Operating Temperature | - 55 C | |
| Factory Pack QuantityFactory Pack Quantity | 10 | |
| Mounting Styles | SMD/SMT | |
| Forward Transconductance - Min | 1.5 S | |
| Manufacturer | MACOM | |
| Brand | MACOM | |
| RoHS | Details | |
| Id - Continuous Drain Current | 12 A | |
| Package Description | FLANGE MOUNT, R-CDFM-F8 | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 200 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | UF28100V | |
| Package Shape | RECTANGULAR | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | M/A-COM TECHNOLOGY SOLUTIONS INC |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Risk Rank | 5.2 | |
| Drain Current-Max (ID) | 12 A | |
| Packaging | Tray | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 | |
| Type | RF Power MOSFET | |
| Additional Feature | LOW NOISE | |
| Subcategory | MOSFETs | |
| Technology | Si | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 8 | |
| JESD-30 Code | R-CDFM-F8 | |
| Qualification Status | Not Qualified | |
| Operating Frequency | 100 MHz to 500 MHz | |
| Configuration | Dual | |
| Operating Mode | ENHANCEMENT MODE | |
| Output Power | 100 W | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | N-CHANNEL | |
| Product Type | RF MOSFET Transistors | |
| Gain | 10 dB | |
| Drain Current-Max (Abs) (ID) | 12 A | |
| DS Breakdown Voltage-Min | 65 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 250 W | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| Product Category | RF MOSFET Transistors |
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