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- MA4E2508M-1112
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MA4E2508M-1112 Технические параметры
MACOM Technology Solutions MA4E2508M-1112 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | ||
| Package / Case | Die | |
| Surface Mount | YES | |
| Supplier Device Package | Die | |
| Diode Element Material | SILICON | |
| Number of Terminals | 2Terminals | |
| Mfr | MACOM Technology Solutions | |
| Package | Tray | |
| Product Status | Active | |
| Power Dissipation (Max) | 50 mW | |
| Base Product Number | MA4E2508 | |
| Vr - Reverse Voltage | 5 V | |
| Ir - Reverse Current | - | |
| Pd - Power Dissipation | 50 mW | |
| Maximum Operating Temperature | + 125 C | |
| Unit Weight | 0.000018 oz | |
| Minimum Operating Temperature | - 40 C | |
| Factory Pack QuantityFactory Pack Quantity | 100 | |
| Mounting Styles | SMD/SMT | |
| Vrrm - Repetitive Reverse Voltage | 5 V | |
| Manufacturer | MACOM | |
| Brand | MACOM | |
| If - Forward Current | 20 mA | |
| Ifsm - Forward Surge Current | - | |
| Package Description | R-XBCC-N2 | |
| Package Style | CHIP CARRIER | |
| Package Body Material | UNSPECIFIED | |
| Manufacturer Package Code | CASE 1112 | |
| Operating Temperature-Max | 175 °C | |
| Operating Frequency (Max) | 18 GHz | |
| Manufacturer Part Number | MA4E2508M-1112 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Package Shape | RECTANGULAR | |
| Number of Elements | 2 Elements | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | M/A-COM TECHNOLOGY SOLUTIONS INC | |
| Risk Rank | 1.33 | |
| Series | - | |
| Operating Temperature | -40°C ~ 125°C (TJ) | |
| ECCN Code | EAR99 | |
| Type | Medium Barrier Silicon Schottky Diodes | |
| HTS Code | 8541.10.00.60 | |
| Subcategory | Diodes & Rectifiers | |
| Technology | Si | |
| Terminal Position | BOTTOM | |
| Terminal Form | NO LEAD | |
| Reach Compliance Code | compliant | |
| Pin Count | 2 | |
| JESD-30 Code | R-XBCC-N2 | |
| Qualification Status | Not Qualified | |
| Configuration | Dual | |
| Diode Type | Schottky | |
| Current - Max | 20 mA | |
| Product Type | Schottky Diodes & Rectifiers | |
| Capacitance @ Vr, F | - | |
| Voltage - Peak Reverse (Max) | 5V | |
| Frequency Band | KU BAND | |
| Resistance @ If, F | 18Ohm @ 10.5mA, 18GHz | |
| Diode Capacitance-Max | 0.24 pF | |
| Product | Schottky Diodes | |
| Vf - Forward Voltage | 420 mV | |
| Product Category | Schottky Diodes & Rectifiers | |
| Type of Schottky Barrier | MEDIUM BARRIER | |
| Pulsed Input Power-Max | 0.1 W |
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