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MA4E2532M-1113 Технические параметры

MACOM Technology Solutions  MA4E2532M-1113 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
Package / Case Die
Surface Mount YES
Supplier Device Package Die
Diode Element Material SILICON
Number of Terminals 4Terminals
Mfr MACOM Technology Solutions
Package Tray
Product Status Active
Power Dissipation (Max) 50 mW
Base Product Number MA4E2532
Factory Pack QuantityFactory Pack Quantity 100
Manufacturer MACOM
Brand MACOM
Package Description S-XBCC-N4
Package Style CHIP CARRIER
Package Body Material UNSPECIFIED
Manufacturer Package Code CASE 1113
Operating Temperature-Max 175 °C
Operating Frequency (Max) 18 GHz
Manufacturer Part Number MA4E2532M-1113
Package Shape SQUARE
Number of Elements 4 Elements
Part Life Cycle Code Active
Ihs Manufacturer M/A-COM TECHNOLOGY SOLUTIONS INC
Свойство продукта Значение свойства
Risk Rank 5.2
Operating Temperature 175°C (TJ)
Packaging Waffle
ECCN Code EAR99
HTS Code 8541.10.00.60
Subcategory Diodes & Rectifiers
Technology Si
Terminal Position BOTTOM
Terminal Form NO LEAD
Reach Compliance Code compliant
Pin Count 4
JESD-30 Code S-XBCC-N4
Qualification Status Not Qualified
Configuration RING, 4 ELEMENTS
Diode Type Schottky - 2 Pair Series
Current - Max 20 mA
Product Type Schottky Diodes & Rectifiers
Capacitance @ Vr, F 0.18pF @ 0V, 1MHz
Voltage - Peak Reverse (Max) 5V
Frequency Band KU BAND
Resistance @ If, F 18Ohm @ 10.5mA, 1MHz
Diode Capacitance-Max 0.18 pF
Product Category Schottky Diodes & Rectifiers
Type of Schottky Barrier MEDIUM BARRIER
Pulsed Input Power-Max 0.1 W
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