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MAPRST0912-350 Технические параметры

M/A-Com Technology Solutions  MAPRST0912-350 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - RF
Марка
Factory Lead Time 28 Weeks
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Ceramic
Transistor Element Material SILICON
Collector-Emitter Breakdown Voltage 65V
Number of Elements 1 Element
Operating Temperature 200°C TJ
Packaging Tray
Published 2009
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2Terminations
Additional Feature WITH EMITTER BALLASTING RESISTORS
Max Power Dissipation 350W
Terminal Position DUAL
Свойство продукта Значение свойства
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 1.215GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
JESD-30 Code R-CDFM-F2
Qualification Status Not Qualified
Element Configuration Single
Case Connection BASE
Transistor Application AMPLIFIER
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 65V
Max Collector Current 32.5A
Gain 9.4dB
Emitter Base Voltage (VEBO) 3V
Continuous Collector Current 32.5A
RoHS Status ROHS3 Compliant

MAPRST0912-350 Документы

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