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PH3135-20M Технические параметры
M/A-Com Technology Solutions PH3135-20M technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | ||
| Factory Lead Time | 28 Weeks | |
| Mount | Screw | |
| Package / Case | Ceramic | |
| Number of Pins | 3Pins | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 65V | |
| Number of Elements | 1 Element | |
| Operating Temperature | 200°C TJ | |
| Packaging | Tray | |
| Published | 2009 | |
| Pbfree Code | yes | |
| Part Status | Active | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Number of Terminations | 2Terminations | |
| Additional Feature | WITH EMITTER BALLASTING RESISTORS | |
| Max Power Dissipation | 20W |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Frequency | 3.5GHz | |
| Pin Count | 2 | |
| JESD-30 Code | S-CDFM-F2 | |
| Element Configuration | Single | |
| Power Dissipation | 200W | |
| Case Connection | BASE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Transistor Type | NPN | |
| Collector Emitter Voltage (VCEO) | 65V | |
| Max Collector Current | 2.4A | |
| Gain | 7.5dB | |
| Emitter Base Voltage (VEBO) | 3V | |
| Continuous Collector Current | 2.4A | |
| Radiation Hardening | No | |
| RoHS Status | ROHS3 Compliant |
PH3135-20M Документы
- DatasheetsPH3135-20M
- PCN Design/SpecificationMEP & BeO Family of Kyocera Pkgs AG Braze to CuSil 24/Sept/2015
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