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DL2G75SH12A Технические параметры

MagnaChip  DL2G75SH12A technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка MagnaChip
EU RoHS Supplier Unconfirmed
ECCN (US) EAR99
Automotive Unknown
Typical Collector Emitter Saturation Voltage (V) 1.8
Maximum Collector-Emitter Voltage (V) 1200
Maximum Power Dissipation (mW) 500
Maximum Gate Emitter Voltage (V) ±20
Maximum Continuous Collector Current (A) 100
Maximum Gate Emitter Leakage Current (uA) 0.2
Minimum Operating Temperature (°C) -40
Свойство продукта Значение свойства
Maximum Operating Temperature (°C) 150
Mounting Through Hole
Package Height 34
Package Width 8.15(Max)
Package Length 66
PCB changed 6
Supplier Package Case 6DM-2
Part Status Obsolete
Pin Count 6
Configuration Dual
Channel Type N
Просмотр сходства
DL2G75SH12A brand manufacturers: MagnaChip, Anli stock, DL2G75SH12A reference price.MagnaChip. DL2G75SH12A parameters, DL2G75SH12A Datasheet PDF and pin diagram description download.You can use the DL2G75SH12A Transistors - IGBTs - Modules, DSP Datesheet PDF, find DL2G75SH12A pin diagram and circuit diagram and usage method of function,DL2G75SH12A electronics tutorials.You can download from the Anli.