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MBQ50T65FDSCTH Технические параметры

MagnaChip  MBQ50T65FDSCTH technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Single
Марка MagnaChip
EU RoHS Compliant
ECCN (US) EAR99
Automotive Unknown
PPAP Unknown
Maximum Gate Emitter Voltage (V) ±20
Maximum Collector-Emitter Voltage (V) 650
Typical Collector Emitter Saturation Voltage (V) 1.95
Maximum Continuous Collector Current (A) 100
Maximum Gate Emitter Leakage Current (uA) 0.1
Maximum Power Dissipation (mW) 273
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 175
Свойство продукта Значение свойства
Mounting Through Hole
Package Height 21.46(Max)
Package Width 5.31(Max)
Package Length 16.26(Max)
PCB changed 3
Tab Tab
Standard Package Name TO-247
Supplier Package TO-247
Lead Shape Through Hole
Packaging Tube
Part Status Unconfirmed
Pin Count 3
Configuration Single
Channel Type N
Просмотр сходства
MBQ50T65FDSCTH brand manufacturers: MagnaChip, Anli stock, MBQ50T65FDSCTH reference price.MagnaChip. MBQ50T65FDSCTH parameters, MBQ50T65FDSCTH Datasheet PDF and pin diagram description download.You can use the MBQ50T65FDSCTH Transistors - IGBTs - Single, DSP Datesheet PDF, find MBQ50T65FDSCTH pin diagram and circuit diagram and usage method of function,MBQ50T65FDSCTH electronics tutorials.You can download from the Anli.