Локаль
Язык
- English
- русский
Валюта
- CNY-¥
- RUB-₽
Цена такой валюты может меняться в зависимости от курса только для справки
Корзина для покупок 
Есть складские запасы
Min. : 1
Mult. : 1
Mult. : 1
Not available to buy on line? Want the lower wholesale price? Please
sendRFQ, we will
respond immediately
MDP18N50BTH Технические параметры
MagnaChip MDP18N50BTH technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | MagnaChip | |
| Mount | Through Hole | |
| Number of Pins | 3Pins | |
| Number of Elements | 1 Element | |
| RoHS | Compliant | |
| Turn Off Delay Time | 222 ns | |
| Package Description | , | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | Yes | |
| Manufacturer Part Number | MDP18N50BTH | |
| Manufacturer | MagnaChip Semiconductor Ltd | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MAGNACHIP SEMICONDUCTOR LTD | |
| Risk Rank | 5.68 | |
| Max Operating Temperature | 150 °C |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Min Operating Temperature | -55 °C | |
| Max Power Dissipation | 236 W | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Element Configuration | Single | |
| Power Dissipation | 236 W | |
| Turn On Delay Time | 32 ns | |
| Continuous Drain Current (ID) | 18 A | |
| Gate to Source Voltage (Vgs) | 30 V | |
| Input Capacitance | 2.49 nF | |
| Drain to Source Resistance | 270 mΩ | |
| Width | 4.83 mm | |
| Height | 16.51 mm | |
| Length | 10.67 mm | |
| Radiation Hardening | No |
Индекс :
0123456789ABCDEFGHIJKLMNOPQRSTUVWXYZ