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MMIS70R1K4PTH Технические параметры

MagnaChip  MMIS70R1K4PTH technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка MagnaChip
ECCN (US) EAR99
Automotive Unknown
PPAP Unknown
Category Power MOSFET
Process Technology Super Junction
Channel Mode Enhancement
Number of Elements per Chip 1
Maximum Drain Source Voltage (V) 700
Maximum Gate Source Voltage (V) ±30
Maximum Gate Threshold Voltage (V) 4
Maximum Continuous Drain Current (A) 3.2
Maximum Gate Source Leakage Current (nA) 100
Maximum IDSS (uA) 1
Maximum Drain Source Resistance (mOhm) 1400@10V
Typical Gate Charge @ Vgs (nC) 11@10V
Typical Gate Charge @ 10V (nC) 11
Typical Input Capacitance @ Vds (pF) 312@25V
Maximum Power Dissipation (mW) 33000
Свойство продукта Значение свойства
Typical Fall Time (ns) 21
Typical Rise Time (ns) 20
Typical Turn-Off Delay Time (ns) 33
Typical Turn-On Delay Time (ns) 9
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Mounting Through Hole
Package Height 6.22(Max)
Package Width 2.39(Max)
Package Length 6.73(Max)
PCB changed 3
Tab Tab
Standard Package Name TO-251
Supplier Package IPAK
Lead Shape Through Hole
Packaging Tube
Part Status Active
Pin Count 3
Configuration Single
Channel Type N
Просмотр сходства
MMIS70R1K4PTH brand manufacturers: MagnaChip, Anli stock, MMIS70R1K4PTH reference price.MagnaChip. MMIS70R1K4PTH parameters, MMIS70R1K4PTH Datasheet PDF and pin diagram description download.You can use the MMIS70R1K4PTH Transistors - FETs, MOSFETs - Arrays, DSP Datesheet PDF, find MMIS70R1K4PTH pin diagram and circuit diagram and usage method of function,MMIS70R1K4PTH electronics tutorials.You can download from the Anli.