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DA2F75N12S Технические параметры

MagnaChip Semiconductor  DA2F75N12S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 960
Peak Reverse Repetitive Voltage (V) 1200
Maximum Continuous Forward Current (A) 150
Peak Non-Repetitive Surge Current (A) 1500
Peak Forward Voltage (V) 2.2@75A
Peak Reverse Current (uA) 3000
Maximum Power Dissipation (mW) 200000
Peak Reverse Recovery Time (ns) 130
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Свойство продукта Значение свойства
Supplier Package Case 5DM-1
Military No
Mounting Screw
Package Height 22.95(Max)
Package Length 94
Package Width 27.5
PCB changed 3
Part Status Obsolete
Type Switching Diode
Pin Count 3
Configuration Dual Common Cathode
RoHS Status Supplier Unconfirmed
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DA2F75N12S Документы

DA2F75N12S brand manufacturers: MagnaChip Semiconductor, Anli stock, DA2F75N12S reference price.MagnaChip Semiconductor. DA2F75N12S parameters, DA2F75N12S Datasheet PDF and pin diagram description download.You can use the DA2F75N12S Diodes - RF, DSP Datesheet PDF, find DA2F75N12S pin diagram and circuit diagram and usage method of function,DA2F75N12S electronics tutorials.You can download from the Anli.