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DB2F200P6S Технические параметры

MagnaChip Semiconductor  DB2F200P6S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 480
Peak Reverse Repetitive Voltage (V) 600
Maximum Continuous Forward Current (A) 400
Peak Non-Repetitive Surge Current (A) 3300
Peak Forward Voltage (V) 1.7@200A
Peak Reverse Current (uA) 8500
Maximum Power Dissipation (mW) 700000
Peak Reverse Recovery Time (ns) 220
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Свойство продукта Значение свойства
Automotive Unknown
Supplier Package Case 5DM-2
Military No
Mounting Screw
Package Height 29.75(Max)
Package Length 93
Package Width 35
PCB changed 3
Part Status Obsolete
Type Switching Diode
Pin Count 3
Configuration Dual Common Anode
RoHS Status Supplier Unconfirmed
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DB2F200P6S Документы

DB2F200P6S brand manufacturers: MagnaChip Semiconductor, Anli stock, DB2F200P6S reference price.MagnaChip Semiconductor. DB2F200P6S parameters, DB2F200P6S Datasheet PDF and pin diagram description download.You can use the DB2F200P6S Diodes - RF, DSP Datesheet PDF, find DB2F200P6S pin diagram and circuit diagram and usage method of function,DB2F200P6S electronics tutorials.You can download from the Anli.