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DH2F100N4SE Технические параметры

MagnaChip Semiconductor  DH2F100N4SE technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 320
Peak Reverse Repetitive Voltage (V) 400
Maximum Continuous Forward Current (A) 180
Peak Non-Repetitive Surge Current (A) 2000
Peak Forward Voltage (V) 1.4@100A
Peak Reverse Current (uA) 1000
Peak Reverse Recovery Time (ns) 80
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 175
Automotive Unknown
Свойство продукта Значение свойства
Supplier Package Case 3DM-2NIE
Military No
Mounting Screw
Package Height 15.6(Max)
Package Length 92
Package Width 27
PCB changed 3
Part Status Obsolete
Type Switching Diode
Pin Count 3
Configuration Dual Common Cathode
RoHS Status Supplier Unconfirmed
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DH2F100N4SE Документы

DH2F100N4SE brand manufacturers: MagnaChip Semiconductor, Anli stock, DH2F100N4SE reference price.MagnaChip Semiconductor. DH2F100N4SE parameters, DH2F100N4SE Datasheet PDF and pin diagram description download.You can use the DH2F100N4SE Diodes - RF, DSP Datesheet PDF, find DH2F100N4SE pin diagram and circuit diagram and usage method of function,DH2F100N4SE electronics tutorials.You can download from the Anli.