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DH2F150N6S Технические параметры
MagnaChip Semiconductor DH2F150N6S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Diodes - RF | |
| Марка | ||
| ECCN (US) | EAR99 | |
| Maximum DC Reverse Voltage (V) | 480 | |
| Peak Reverse Repetitive Voltage (V) | 600 | |
| Maximum Continuous Forward Current (A) | 300 | |
| Peak Non-Repetitive Surge Current (A) | 2750 | |
| Peak Forward Voltage (V) | 1.5@150A | |
| Peak Reverse Current (uA) | 1000 | |
| Peak Reverse Recovery Time (ns) | 180 | |
| Minimum Operating Temperature (°C) | -40 | |
| Maximum Operating Temperature (°C) | 175 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Supplier Package | Case 3DM-2NI | |
| Military | No | |
| Mounting | Screw | |
| Package Height | 16.1(Max) | |
| Package Length | 92 | |
| Package Width | 27 | |
| PCB changed | 3 | |
| Part Status | Obsolete | |
| Type | Switching Diode | |
| Pin Count | 3 | |
| Configuration | Dual Common Cathode | |
| RoHS Status | Supplier Unconfirmed |
DH2F150N6S Документы
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