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DL2F150N4S Технические параметры

MagnaChip Semiconductor  DL2F150N4S technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Diodes - RF
Марка
ECCN (US) EAR99
Maximum DC Reverse Voltage (V) 320
Peak Reverse Repetitive Voltage (V) 400
Maximum Continuous Forward Current (A) 300
Peak Non-Repetitive Surge Current (A) 2750
Peak Forward Voltage (V) 1.4@150A
Peak Reverse Current (uA) 1500
Maximum Power Dissipation (mW) 540000
Peak Reverse Recovery Time (ns) 100
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Свойство продукта Значение свойства
Supplier Package Case 6DM-2
Military No
Mounting Through Hole
Package Height 34
Package Length 66
Package Width 8.15(Max)
PCB changed 6
Part Status Obsolete
Type Switching Diode
Pin Count 6
Configuration Dual
RoHS Status Supplier Unconfirmed
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DL2F150N4S Документы

DL2F150N4S brand manufacturers: MagnaChip Semiconductor, Anli stock, DL2F150N4S reference price.MagnaChip Semiconductor. DL2F150N4S parameters, DL2F150N4S Datasheet PDF and pin diagram description download.You can use the DL2F150N4S Diodes - RF, DSP Datesheet PDF, find DL2F150N4S pin diagram and circuit diagram and usage method of function,DL2F150N4S electronics tutorials.You can download from the Anli.