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DM2G150SH12AE Технические параметры

MagnaChip Semiconductor  DM2G150SH12AE technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
ECCN (US) EAR99
Maximum Collector-Emitter Voltage (V) 1200
Typical Collector Emitter Saturation Voltage (V) 1.8
Maximum Gate Emitter Voltage (V) ±20
Maximum Power Dissipation (mW) 1100000
Maximum Continuous Collector Current (A) 200
Maximum Gate Emitter Leakage Current (uA) 0.25
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Supplier Package Case 7DM-2
Свойство продукта Значение свойства
Military No
Mounting Screw
Package Height 29.95(Max)
Package Length 94
Package Width 48
PCB changed 7
Part Status Obsolete
Pin Count 7
Configuration Dual
Channel Type N
RoHS Status Supplier Unconfirmed
Просмотр сходства
DM2G150SH12AE brand manufacturers: MagnaChip Semiconductor, Anli stock, DM2G150SH12AE reference price.MagnaChip Semiconductor. DM2G150SH12AE parameters, DM2G150SH12AE Datasheet PDF and pin diagram description download.You can use the DM2G150SH12AE Transistors - IGBTs - Modules, DSP Datesheet PDF, find DM2G150SH12AE pin diagram and circuit diagram and usage method of function,DM2G150SH12AE electronics tutorials.You can download from the Anli.