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DM2G50SH6N Технические параметры

MagnaChip Semiconductor  DM2G50SH6N technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - IGBTs - Modules
Марка
ECCN (US) EAR99
Typical Collector Emitter Saturation Voltage (V) 2.1
Maximum Collector-Emitter Voltage (V) 600
Maximum Power Dissipation (mW) 275000
Maximum Gate Emitter Voltage (V) ±20
Maximum Continuous Collector Current (A) 75
Maximum Gate Emitter Leakage Current (uA) 0.1
Minimum Operating Temperature (°C) -40
Maximum Operating Temperature (°C) 150
Automotive Unknown
Свойство продукта Значение свойства
Supplier Package Case 7DM-1
Military No
Mounting Screw
Package Length 93
Package Width 35
PCB changed 7
Part Status Unconfirmed
Pin Count 7
Configuration Dual
Channel Type N
RoHS Status Supplier Unconfirmed
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DM2G50SH6N Документы

DM2G50SH6N brand manufacturers: MagnaChip Semiconductor, Anli stock, DM2G50SH6N reference price.MagnaChip Semiconductor. DM2G50SH6N parameters, DM2G50SH6N Datasheet PDF and pin diagram description download.You can use the DM2G50SH6N Transistors - IGBTs - Modules, DSP Datesheet PDF, find DM2G50SH6N pin diagram and circuit diagram and usage method of function,DM2G50SH6N electronics tutorials.You can download from the Anli.