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MIC94050YM4TR Технические параметры
Micrel MIC94050YM4TR technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Micrel | |
| Package / Case | 0603 (1608 Metric) | |
| Surface Mount | YES | |
| Supplier Device Package | 0603 | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Package | Tape & Reel (TR) | |
| Mfr | KOA Speer Electronics, Inc. | |
| Product Status | Active | |
| Package Description | SMALL OUTLINE, R-PDSO-G4 | |
| Package Style | SMALL OUTLINE | |
| Moisture Sensitivity Levels | 1 | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 40 | |
| Rohs Code | Yes | |
| Manufacturer Part Number | MIC94050YM4TR | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Microchip Technology Inc | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICREL INC | |
| Risk Rank | 5.69 | |
| Drain Current-Max (ID) | 1.8 A | |
| Operating Temperature | -55°C ~ 155°C | |
| Series | SG73S-RT | |
| Size / Dimension | 0.063 L x 0.031 W (1.60mm x 0.80mm) | |
| Tolerance | ±1% | |
| JESD-609 Code | e3 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pbfree Code | Yes | |
| Number of Terminations | 2Terminations | |
| ECCN Code | EAR99 | |
| Temperature Coefficient | ±100ppm/°C | |
| Resistance | 536 Ohms | |
| Terminal Finish | Matte Tin (Sn) | |
| Composition | Thick Film | |
| Power (Watts) | 0.2W, 1/5W | |
| HTS Code | 8541.21.00.95 | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Pin Count | 4 | |
| JESD-30 Code | R-PDSO-G4 | |
| Qualification Status | Not Qualified | |
| Failure Rate | - | |
| Configuration | SINGLE WITH BUILT-IN DIODE AND RESISTOR | |
| Operating Mode | ENHANCEMENT MODE | |
| Case Connection | SUBSTRATE | |
| Transistor Application | SWITCHING | |
| Polarity/Channel Type | P-CHANNEL | |
| Drain-source On Resistance-Max | 0.32 Ω | |
| DS Breakdown Voltage-Min | 6 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Features | Anti-Sulfur, Automotive AEC-Q200, Moisture Resistant, Pulse Withstanding | |
| Height Seated (Max) | 0.022 (0.55mm) | |
| Ratings | - |
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