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2N3810 Технические параметры

Microchip  2N3810 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - Bipolar (BJT) - Arrays
Марка Microchip
Lifecycle Status Production (Last Updated: 2 months ago)
Mounting Type Through Hole
Package / Case TO-78-6 Metal Can
Mount Through Hole
Surface Mount NO
Number of Pins 6Pins
Supplier Device Package TO-78-6
Number of Terminals 8Terminals
Transistor Element Material SILICON
Package Bulk
Current-Collector (Ic) (Max) 50mA
Base Product Number 2N380
Mfr Microchip Technology
Product Status Active
Emitter- Base Voltage VEBO 5 V
Pd - Power Dissipation 350 mW
Transistor Polarity PNP
Maximum Operating Temperature + 200 C
DC Collector/Base Gain hfe Min 150 at 100 uA, 5 VDC
Collector-Emitter Saturation Voltage 250 mV
Unit Weight 0.167022 oz
Minimum Operating Temperature - 65 C
Factory Pack QuantityFactory Pack Quantity 1
Mounting Styles Through Hole
Gain Bandwidth Product fT -
Manufacturer Microchip
Brand Microchip Technology / Atmel
Maximum DC Collector Current 50 mA
DC Current Gain hFE Max 450 at 100 uA, 5 VDC
RoHS N
Collector- Emitter Voltage VCEO Max 60 V
Schedule B 8541210080, 8541210080/8541210080, 8541210080/8541210080/8541210080, 8541210080/8541210080/8541210080/8541210080
Collector-Emitter Breakdown Voltage 60 V
Number of Elements 2 Elements
Package Description CYLINDRICAL, O-MBCY-W8
Package Style CYLINDRICAL
Package Body Material METAL
Reflow Temperature-Max (s) NOT SPECIFIED
Operating Temperature-Max 200 °C
Rohs Code No
Transition Frequency-Nom (fT) 100 MHz
Manufacturer Part Number 2N3810
Package Shape ROUND
Part Life Cycle Code Active
Свойство продукта Значение свойства
Ihs Manufacturer MICROSEMI CORP
Risk Rank 1.4
Part Package Code TO-78
Operating Temperature -65°C ~ 200°C (TJ)
Series -
Packaging Bulk
JESD-609 Code e0
Pbfree Code No
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature 200 °C
Min Operating Temperature -65 °C
HTS Code 8541.21.00.95
Subcategory Transistors
Max Power Dissipation 350 mW
Technology Si
Terminal Position BOTTOM
Terminal Form WIRE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code compliant
Pin Count 8
JESD-30 Code O-MBCY-W8
Qualification Status Not Qualified
Polarity PNP
Configuration Dual
Power Dissipation 350 mW
Power - Max 350mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Product Type BJTs - Bipolar Transistors
Transistor Type 2 PNP (Dual)
Collector Emitter Voltage (VCEO) 60 V
Max Collector Current 50 mA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 1mA, 5V
Current - Collector Cutoff (Max) 10µA (ICBO)
JEDEC-95 Code TO-78
Vce Saturation (Max) @ Ib, Ic 250mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max) 60V
Frequency - Transition -
Collector Base Voltage (VCBO) 60 V
Emitter Base Voltage (VEBO) 5 V
Collector Current-Max (IC) 0.05 A
DC Current Gain-Min (hFE) 125
Collector-Emitter Voltage-Max 60 V
Product Category Bipolar Transistors - BJT
Radiation Hardening No
Просмотр сходства
2N3810 brand manufacturers: Microchip, Anli stock, 2N3810 reference price.Microchip. 2N3810 parameters, 2N3810 Datasheet PDF and pin diagram description download.You can use the 2N3810 Transistors - Bipolar (BJT) - Arrays, DSP Datesheet PDF, find 2N3810 pin diagram and circuit diagram and usage method of function,2N3810 electronics tutorials.You can download from the Anli.