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- A3P250-2FGG256I
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A3P250-2FGG256I Технические параметры
Microchip A3P250-2FGG256I technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Embedded - FPGAs (Field Programmable Gate Array) | |
| Марка | Microchip | |
| Mounting Type | Surface Mount | |
| Package / Case | DO-220AA | |
| Surface Mount | YES | |
| Supplier Device Package | DO-220AA (SMP) | |
| Number of Terminals | 256Terminals | |
| Number of I/Os | 157I/Os | |
| Package | Tray | |
| Base Product Number | A3P250 | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Package Description | BGA, | |
| Package Style | GRID ARRAY | |
| Moisture Sensitivity Levels | 3 | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Min | -40 °C | |
| Supply Voltage-Nom | 1.5 V | |
| Reflow Temperature-Max (s) | 40 | |
| Supply Voltage-Min | 1.425 V | |
| Operating Temperature-Max | 100 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | A3P250-2FGG256I | |
| Clock Frequency-Max | 350 MHz | |
| Package Code | BGA | |
| Package Shape | SQUARE | |
| Manufacturer | Microsemi Corporation | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Supply Voltage-Max | 1.575 V | |
| Risk Rank | 5.25 | |
| Series | eSMP® | |
| Packaging | Tape & Reel (TR) | |
| Operating Temperature | -40°C ~ 100°C (TJ) |
| Свойство продукта | Значение свойства | |
|---|---|---|
| JESD-609 Code | e1 | |
| Part Status | Active | |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
| HTS Code | 8542.39.00.01 | |
| Technology | CMOS | |
| Voltage - Supply | 1.425V ~ 1.575V | |
| Terminal Position | BOTTOM | |
| Terminal Form | BALL | |
| Peak Reflow Temperature (Cel) | 260 | |
| Terminal Pitch | 1 mm | |
| Reach Compliance Code | compliant | |
| Base Part Number | ESH1PC | |
| JESD-30 Code | S-PBGA-B256 | |
| Qualification Status | Not Qualified | |
| Temperature Grade | INDUSTRIAL | |
| Speed | Fast Recovery = 200mA (Io) | |
| Diode Type | Standard | |
| Current - Reverse Leakage @ Vr | 1µA @ 150V | |
| Voltage - Forward (Vf) (Max) @ If | 900mV @ 1A | |
| Operating Temperature - Junction | -55°C ~ 175°C | |
| Organization | 6144 CLBS, 250000 GATES | |
| Seated Height-Max | 1.8 mm | |
| Voltage - DC Reverse (Vr) (Max) | 150V | |
| Current - Average Rectified (Io) | 1A | |
| Programmable Logic Type | FIELD PROGRAMMABLE GATE ARRAY | |
| Total RAM Bits | 36864 | |
| Capacitance @ Vr, F | 25pF @ 4V, 1MHz | |
| Number of Gates | 250000Gates | |
| Speed Grade | 2 | |
| Number of CLBs | 6144CLBs | |
| Number of Equivalent Gates | 250000Equivalent Gates | |
| Reverse Recovery Time (trr) | 25ns | |
| Width | 17 mm | |
| Length | 17 mm |
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