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APTM50H15FT1G Технические параметры

Microchip  APTM50H15FT1G technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.

Свойство продукта Значение свойства
Классификация Transistors - FETs, MOSFETs - Arrays
Марка Microchip
Mounting Type Chassis Mount
Package / Case SP1
Supplier Device Package SP1
Continuous Drain Current Id 25
Package Bulk
Base Product Number APTM50
Current - Continuous Drain (Id) @ 25℃ 25A
Mfr Microchip Technology
Product Status Active
Typical Turn-On Delay Time 29 ns
Vgs th - Gate-Source Threshold Voltage 3 V
Pd - Power Dissipation 208 W
Transistor Polarity N-Channel
Maximum Operating Temperature + 100 C
Vgs - Gate-Source Voltage - 30 V, + 30 V
Unit Weight 2.821917 oz
Minimum Operating Temperature - 40 C
Factory Pack QuantityFactory Pack Quantity 1
Mounting Styles Screw Mounts
Manufacturer Microchip
Brand Microchip Technology / Atmel
Свойство продукта Значение свойства
Rds On - Drain-Source Resistance 130 mOhms
RoHS Details
Typical Turn-Off Delay Time 80 ns
Id - Continuous Drain Current 25 A
Operating Temperature -40°C ~ 150°C (TJ)
Series -
Packaging Tube
Type Full Bridge
Subcategory Discrete Semiconductor Modules
Technology MOSFET (Metal Oxide)
Configuration 4 N-Channel (Half Bridge)
Power - Max 208W
Rds On (Max) @ Id, Vgs 180mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 5448pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
Rise Time 35 ns
Drain to Source Voltage (Vdss) 500V
Product Type Discrete Semiconductor Modules
Channel Type Dual N
FET Feature -
Product Power MOSFET Modules
Product Category Discrete Semiconductor Modules
Просмотр сходства
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