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DN3545N3-G P005 Технические параметры
Microchip DN3545N3-G P005 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - FETs, MOSFETs - Single | |
| Марка | Microchip | |
| Mounting Type | Surface Mount | |
| Package / Case | DO-214AB, SMC | |
| Surface Mount | NO | |
| Supplier Device Package | DO-214AB (SMC) | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Package | Tape & Reel (TR) | |
| Mfr | Taiwan Semiconductor Corporation | |
| Product Status | Discontinued at Digi-Key | |
| Package Style | CYLINDRICAL | |
| Package Body Material | PLASTIC/EPOXY | |
| Operating Temperature-Min | -55 °C | |
| Operating Temperature-Max | 150 °C | |
| Rohs Code | Yes | |
| Manufacturer Part Number | DN3545N3-GP005 | |
| Package Shape | ROUND | |
| Manufacturer | Microchip Technology Inc | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Risk Rank | 5.27 | |
| Drain Current-Max (ID) | 0.136 A | |
| Operating Temperature | -55°C ~ 150°C (TJ) | |
| Series | 1.5SMC |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Type | Zener | |
| Applications | Telecom | |
| Additional Feature | HIGH INPUT IMPEDANCE | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Reach Compliance Code | compliant | |
| JESD-30 Code | O-PBCY-W3 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Operating Mode | DEPLETION MODE | |
| Power Line Protection | No | |
| Voltage - Breakdown (Min) | 31.4V | |
| Power - Peak Pulse | 1500W (1.5kW) | |
| Current - Peak Pulse (10/1000μs) | 34A | |
| Voltage - Clamping (Max) @ Ipp | 45.7V | |
| Voltage - Reverse Standoff (Typ) | 28.2V | |
| Transistor Application | SWITCHING | |
| Unidirectional Channels | 1 | |
| Polarity/Channel Type | N-CHANNEL | |
| JEDEC-95 Code | TO-92 | |
| Capacitance @ Frequency | - | |
| Drain-source On Resistance-Max | 20 Ω | |
| DS Breakdown Voltage-Min | 450 V | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Power Dissipation-Max (Abs) | 0.74 W | |
| Feedback Cap-Max (Crss) | 15 pF | |
| Power Dissipation Ambient-Max | 0.74 W |
Индекс :
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