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- JANS2N918UB
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JANS2N918UB Технические параметры
Microchip JANS2N918UB technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Fixed Inductors | |
| Марка | Microchip | |
| Mounting Type | Surface Mount | |
| Package / Case | 4-SMD, No Lead | |
| Surface Mount | YES | |
| Supplier Device Package | UB | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Manufacturer Part Number | E34-600100-J03XSPKIT-NS | |
| Manufacturer | Honeywell | |
| Package | Bulk | |
| Current-Collector (Ic) (Max) | 50 mA | |
| Mfr | Microchip Technology | |
| Product Status | Active | |
| Factory Pack QuantityFactory Pack Quantity | 1 | |
| Brand | Microchip / Microsemi | |
| RoHS | N | |
| Risk Rank | 1.58 | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Part Life Cycle Code | Active | |
| Number of Elements | 1 Element | |
| Package Shape | RECTANGULAR | |
| Rohs Code | No | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Style | SMALL OUTLINE | |
| Package Description | SMALL OUTLINE, R-CDSO-N3 | |
| Operating Temperature | -65°C ~ 200°C (TJ) | |
| Series | Military, MIL-PRF-19500/301 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Subcategory | Transistors | |
| Technology | Si | |
| Terminal Position | DUAL | |
| Terminal Form | NO LEAD | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| Reference Standard | MIL-19500/301H | |
| JESD-30 Code | R-CDSO-N3 | |
| Qualification Status | Qualified | |
| Configuration | SINGLE | |
| Power - Max | 200 mW | |
| Polarity/Channel Type | NPN | |
| Product Type | BJTs - Bipolar Transistors | |
| Transistor Type | NPN | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 3mA, 1V | |
| Current - Collector Cutoff (Max) | 1µA (ICBO) | |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 1mA, 10mA | |
| Voltage - Collector Emitter Breakdown (Max) | 15 V | |
| Frequency - Transition | - | |
| Power Dissipation-Max (Abs) | 0.2 W | |
| Collector Current-Max (IC) | 0.05 A | |
| DC Current Gain-Min (hFE) | 6 | |
| Collector-Emitter Voltage-Max | 15 V | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| Collector-Base Capacitance-Max | 3 pF | |
| Product Category | Bipolar Transistors - BJT |
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