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MDS400 Технические параметры
Microchip MDS400 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | Microchip | |
| Lifecycle Status | Production (Last Updated: 2 months ago) | |
| Mount | Chassis Mount, Screw | |
| Surface Mount | YES | |
| Number of Pins | 55Pins | |
| Number of Terminals | 2Terminals | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 55 V | |
| RoHS | Compliant | |
| Package Description | 55KT, 2 PIN | |
| Package Style | FLANGE MOUNT | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Operating Temperature-Max | 200 °C | |
| Rohs Code | No | |
| Manufacturer Part Number | MDS400 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Microsemi Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 5.57 | |
| Packaging | Bulk | |
| JESD-609 Code | e0 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Pbfree Code | No | |
| ECCN Code | EAR99 | |
| Terminal Finish | TIN LEAD | |
| Max Operating Temperature | 200 °C | |
| Min Operating Temperature | -40 °C | |
| Additional Feature | HIGH RELIABILITY | |
| Max Power Dissipation | 1.45 kW | |
| Terminal Position | DUAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | unknown | |
| Pin Count | 2 | |
| JESD-30 Code | R-CDFM-F2 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Collector Emitter Voltage (VCEO) | 55 V | |
| Max Collector Current | 40 A | |
| Gain | 6.5 dB | |
| Max Frequency | 1.09 GHz | |
| Transition Frequency | 1.09 GHz | |
| Collector Current-Max (IC) | 40 A | |
| Highest Frequency Band | L BAND | |
| Radiation Hardening | No |
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