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MRF545 Технические параметры
Microchip MRF545 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | Microchip | |
| Lifecycle Status | Production (Last Updated: 2 months ago) | |
| Mount | Through Hole | |
| Surface Mount | NO | |
| Number of Pins | 3Pins | |
| Number of Terminals | 3Terminals | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 70 V | |
| RoHS | Compliant | |
| Package Description | CYLINDRICAL, O-MBCY-W3 | |
| Package Style | CYLINDRICAL | |
| Package Body Material | METAL | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | No | |
| Transition Frequency-Nom (fT) | 1400 MHz | |
| Manufacturer Part Number | MRF545 | |
| Package Shape | ROUND | |
| Manufacturer | Microsemi Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 5.1 | |
| Part Package Code | TO-39 | |
| Packaging | Bulk | |
| JESD-609 Code | e0 | |
| Pbfree Code | No |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Finish | TIN LEAD | |
| Max Operating Temperature | 200 °C | |
| Min Operating Temperature | -65 °C | |
| HTS Code | 8541.29.00.75 | |
| Max Power Dissipation | 3.5 W | |
| Terminal Position | BOTTOM | |
| Terminal Form | WIRE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | compliant | |
| Pin Count | 3 | |
| JESD-30 Code | O-MBCY-W3 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | PNP | |
| Collector Emitter Voltage (VCEO) | 70 V | |
| Max Collector Current | 400 mA | |
| JEDEC-95 Code | TO-39 | |
| Gain | 14 dB | |
| Transition Frequency | 1.4 GHz | |
| Collector Base Voltage (VCBO) | 100 V | |
| Collector Current-Max (IC) | 0.4 A | |
| Collector-Emitter Voltage-Max | 70 V | |
| Highest Frequency Band | VERY HIGH FREQUENCY BAND | |
| Collector-Base Capacitance-Max | 3.2 pF | |
| Radiation Hardening | No |
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