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MRF555 Технические параметры
Microchip MRF555 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | Microchip | |
| Lifecycle Status | Obsolete (Last Updated: 2 months ago) | |
| Mount | Surface Mount | |
| Surface Mount | YES | |
| Number of Pins | 4Pins | |
| Number of Terminals | 4Terminals | |
| Transistor Element Material | SILICON | |
| Collector-Emitter Breakdown Voltage | 16 V | |
| RoHS | Compliant | |
| Package Style | DISK BUTTON | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Rohs Code | No | |
| Manufacturer Part Number | MRF555 | |
| Package Shape | ROUND | |
| Manufacturer | Microsemi Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 5.36 | |
| Packaging | Bulk | |
| JESD-609 Code | e0 | |
| Pbfree Code | No |
| Свойство продукта | Значение свойства | |
|---|---|---|
| ECCN Code | EAR99 | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Subcategory | Other Transistors | |
| Max Power Dissipation | 3 W | |
| Terminal Position | RADIAL | |
| Terminal Form | FLAT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Reach Compliance Code | not_compliant | |
| JESD-30 Code | O-PRDB-F4 | |
| Qualification Status | Not Qualified | |
| Configuration | SINGLE | |
| Case Connection | COLLECTOR | |
| Polarity/Channel Type | NPN | |
| Collector Emitter Voltage (VCEO) | 16 V | |
| Max Collector Current | 500 mA | |
| Gain | 13 dB | |
| Collector Base Voltage (VCBO) | 30 V | |
| Power Dissipation-Max (Abs) | 3 W | |
| Collector Current-Max (IC) | 0.5 A | |
| DC Current Gain-Min (hFE) | 50 | |
| Collector-Emitter Voltage-Max | 16 V | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| Collector-Base Capacitance-Max | 5.5 pF | |
| Radiation Hardening | No |
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