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MRF5812GR1 Технические параметры
Microchip MRF5812GR1 technical specifications, attributes, parameters and parts with similar specifications to Silicon Labs SI1084-A-GM.
| Свойство продукта | Значение свойства | |
|---|---|---|
| Классификация | Transistors - Bipolar (BJT) - RF | |
| Марка | Microchip | |
| Lifecycle Status | Obsolete (Last Updated: 2 months ago) | |
| Mount | Surface Mount | |
| Surface Mount | YES | |
| Number of Pins | 8Pins | |
| Number of Terminals | 8Terminals | |
| Transistor Element Material | SILICON | |
| RoHS | Non-Compliant | |
| Collector-Emitter Breakdown Voltage | 15 V | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Package Style | SMALL OUTLINE | |
| Package Body Material | PLASTIC/EPOXY | |
| Reflow Temperature-Max (s) | 40 | |
| Rohs Code | Yes | |
| Transition Frequency-Nom (fT) | 5000 MHz | |
| Manufacturer Part Number | MRF5812GR1 | |
| Package Shape | RECTANGULAR | |
| Manufacturer | Microsemi Corporation | |
| Number of Elements | 1 Element | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | MICROSEMI CORP | |
| Risk Rank | 7.93 | |
| Part Package Code | SOIC | |
| Packaging | Bulk | |
| JESD-609 Code | e3 | |
| Pbfree Code | Yes | |
| ECCN Code | EAR99 |
| Свойство продукта | Значение свойства | |
|---|---|---|
| Terminal Finish | MATTE TIN | |
| Additional Feature | LOW NOISE | |
| Subcategory | Other Transistors | |
| Max Power Dissipation | 1.25 W | |
| Terminal Position | DUAL | |
| Terminal Form | GULL WING | |
| Peak Reflow Temperature (Cel) | 260 | |
| Reach Compliance Code | compliant | |
| Pin Count | 8 | |
| JESD-30 Code | R-PDSO-G8 | |
| Configuration | SINGLE | |
| Transistor Application | AMPLIFIER | |
| Polarity/Channel Type | NPN | |
| Collector Emitter Voltage (VCEO) | 15 V | |
| Max Collector Current | 200 mA | |
| Gain | 15.5 dB | |
| Transition Frequency | 5 GHz | |
| Max Breakdown Voltage | 15 V | |
| Collector Base Voltage (VCBO) | 30 V | |
| Power Dissipation-Max (Abs) | 1.25 W | |
| Collector Current-Max (IC) | 0.2 A | |
| DC Current Gain-Min (hFE) | 50 | |
| Collector-Emitter Voltage-Max | 15 V | |
| Highest Frequency Band | ULTRA HIGH FREQUENCY BAND | |
| Collector-Base Capacitance-Max | 2 pF | |
| Radiation Hardening | No | |
| Lead Free | Lead Free |
Индекс :
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